Long-wavelength quantum well distributed feedback laser diode.
نویسندگان
چکیده
منابع مشابه
Quantum well intermixed tunable wavelength single stripe laser diode
A single waveguide laser with two separately addressed sections is fabricated using selective area intermixing of InGaAsP multiple quantum well grown on InP substrate. The selective intermixing of quantum wells is achieved by capping the two sections with PECVD grown silicon nitride and silicon dioxide respectively followed by rapid thermal annealing the device at 750°C for 30s prior to the fab...
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AbstructWe demonstrated the successful operation of longwavelength InGaAsP low threshold-current index-coupled and gain-coupled DFB lasers grown by chemical beam epitaxy (CBE). For index-coupled DFB lasers, buried-heterostructure six-QW DFB lasers (250 pm long and as-cleaved) operated at 1.55 Lrm with CW threshold currents 10-15 mA and slope efficiencies up to 0.35 mW/mA (both facets). A side-m...
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A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing that is achieved by rapid thermal annealing of the sample with the two sections capped by silicon oxynitride (SiOxNy) and silicon dioxide (SiO2), respectively. Th...
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متن کاملCarrier Lifetime and Recombination in Long-Wavelength Quantum-Well Lasers
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ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 1988
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.16.775